AHST8108

Description

AHST8108 is the world's leading Wi-Fi HaLow™ LGA solder down module

The AHST8108 allows building long-range, ultra-low power Wi-Fi networks in sub 1 GHz license-exempt bands, utilizing compact form factor.
The AHST8108 data rate up to 43.3 Mbps at 8 MHz bandwidth with the high-speed data rate, it enables connectivity for many IoT applications, including sensors, weather stations, industrial monitoring, medical patient monitoring, agriculture monitoring, surveillance camera.

Key Features

Morse Micro MM8108 HaLow chipset
Up to 43.3Mbps data rate
IPEX (MHF1) antenna connector
USB and SDIO for host interface
Compact solder down module

Specifications

Chipset	Morse Micro MM8108
Frequency	915 MHz (US) 868 MHz (EU) 850/924 MHz (JP) 920 MHz (TW)
Modulation	OFDM with BPSK, QPSK, 16QAM, 64QAM, 256QAM
Max. Data rate	Up to 43.3 Mbps @ 8 MHz bandwidth (Max. Phy rate)
Channel bandwidth	1/2/4/8 MHz (US) 1 MHz (EU) 1/2/4 MHz (JP) 1/2/4/MHz (TW)
Antenna connector	1x IPEX (MHF1) antenna connector
Host interface	USB, SDIO, SPI
Form factor	LGA solder down module
Dimensions	13.50 x 18.60 mm
Operating temperature	-40°C to 85°C (-40°F to 185°F)
Software & SDK	https://github.com/MorseMicro
Board configuration file (BCF)	Linux based: bcf_aw_hm677.bin mm8108b2-rl.bin STM32 based: bcf_boardtype_0a02.mbin

Supports worldwide bands from 850MHz to 950MHz

AHST8108 (US)

AHST8108 (EU)

AHST8108 (JP)

AHST8108 (TW)

902 MHz – 928 MHz

863 MHz – 868 MHz

920.5 – 927.5 MHz

920 .5 – 924.5 MHz

26 MHz

5 MHz

7 MHz

4 MHz

Pin Definition - Pin Map

Pin Definition - Pin Description

Pin No.	Definition	Description	Voltage	Type
1	GND1	GROUND		GND
2	MM_RSTN	Asynchronous chip reset (active low)		I
3	MM_WAKE	External input wake from Deep Sleep and Snooze modes		I
4	MM_TMS	JTAG mode select		I
5	MM_TCK	JTAG clock		I
6	MM_TDO	JTAG data out		O
7	GND2	GROUND		GND
8	MM_TDI	JTAG data in		I
9	VBAT	3.3V VBAT supply	3.3V	Power
10	MM_SD0	SDIO Data 0 / SPI_MISO		I/O
11	MM_SD3	SDIO Data 3 / SPI_CS		I/O
12	MM_SD1	SDIO Data 1 / SPI_INT		I/O
13	MM_SD2	SDIO Data 2		I/O
14	MM_SD_CMD	SDIO Command / SPI_MOSI		I/O
15	MM_SD_CLK	SDIO Clock / SPI_SCK		I
16	GPIO5	Programmable digital I/O		I/O
17	GPIO4	Programmable digital I/O		I/O
18	GND3	GROUND		GND
19	GPIO3	Programmable digital I/O		I/O
20	VDDIO	VDD supply for digital I/O	3.3V	Power
21	GND4	GROUND		GND
22	VBAT_TX	3.3 V VBAT_TX Supply	3.3V	Power
23	VDD_USB	USB 3.3V supply	3.3V	Power
24	GND5	GROUND		GND
25	USB_DM	USB DM line		I/O
26	USB_DP	USB DP line		I/O
27	GPIO2	Programmable digital I/O		I/O
28	GND6	GROUND		GND
29	GPIO1	Programmable digital I/O		I/O
30	GPIO0	Programmable digital I/O		I/O
31	GPIO6	Programmable digital I/O		I/O
32	GPIO7	Programmable digital I/O		I/O
33	GPIO8	Programmable digital I/O		I/O
34	GPIO9	Programmable digital I/O		I/O
35	GPIO10	Programmable digital I/O		I/O
36	GND7	GROUND		GND
37	GND8	GROUND		GND
38	GND9	GROUND		GND

RF Specifications & Operating Conditions

Tx transmit power / Rx receive sensitivity
Data Rate	Modulation	BW=1M			BW=2M			BW=4M				BW=8M
Data Rate	Modulation	Tx (dBm) +/-2	Rx (dBm)	PHY rate (Mbps)	Tx (dBm) +/-2	Rx (dBm)	PHY rate (Mbps)	Tx (dBm) +/-2	Rx (dBm)	PHY rate (Mbps)	Tx (dBm) +/-2		Rx (dBm)	PHY rate (Mbps)
MCS0	BPSK	25	-104	0.3	24.5	-102	0.7	22.5	-99	1.5	21.5		-95	3.3
MCS1	QPSK	25	-102	0.7	24.5	-100	1.4	22	-95	3.0	20.5		-92	6.5
MCS2	QPSK	25	-100	1.0	24.5	-97	2.2	22	-93	4.5	20.5		-90	9.8
MCS3	16-QAM	24.5	-97	1.3	24.5	-94	2.9	22	-90	6.0	20.5		-87	13
MCS4	16-QAM	23.5	-94	2.0	24	-91	4.3	22	-86	9.0	20.5		-84	20
MCS5	64-QAM	21	-90	2.7	22.5	-87	5.8	21	-82	12	20		-80	26
MCS6	64-QAM	21	-88	3.0	21	-85	6.5	20	-81	14	19		-78	29
MCS7	64-QAM	18.5	-87	3.3	19.5	-83	7.2	19	-79	15	18.5		-77	33
MCS8	256-QAM	17	-83	4.0	17.75	-79	8.9	18.5	-75	18	17.5		-73	39
MCS9	256-QAM	15.75	-80	4.4	--	--	--	16.75	-74	20	16		-71	43

Note: The following transmit power levels are for IEEE compliance for 802.11ah.
They do not consider any backoffs needed for regional spectrum compliance
(e.g., FCC, CE, TELEC, NCC).
TX power in edge channels will be limited by the restricted band edge in the regulatory regions.

◎ Operating Conditions

Symbol	Minimum	Typical	Maximum	Unit
3.3V (VBAT=VBAT_TX=VDDIO=VDD_USB)	3.0	3.3	3.6	V
TAMBIENT (Ambient temperature)	-40		85	°C
Tstg (Storage temperature)	-40		125	°C

Power Consumption

◎ Transmit Power Consumption

No.	Item			3.3V
Band (MHz)	Mode	BW (MHz)	RF Power (dBm)	Transmit (mA)
Band (MHz)	Mode	BW (MHz)	RF Power (dBm)	Max.	Avg.
11ah US_915	MCS0	1	25	134.61	115.91
		2	24.5	135.06	111.93
		4	22.5	133.97	107.48
		8	21.5	140.48	110.28
	MCS9	1	15.75	109.47	89.18
	MCS8	2	17.75	114.48	89.71
	MCS9	4	16.75	119.58	92.2
	MCS9	8	16	129.01	99.19
11ah EU_865.5	MCS0	1	14.75	106.6	92.08
11ah EU_865.5	MCS9	1	14.75	108.39	89.44

◎ Receive Power Consumption

No.	Item		3.3V
Band (MHz)	Mode	BW (MHz)	Receive (mA)
Band (MHz)	Mode	BW (MHz)	Max.	Avg.
11ah US_915	MCS0	1	81.05	76.9
		2	82.74	78.39
		4	87.48	82.43
		8	97.09	90.41
	MCS9	1	83.29	76.68
	MCS8	2	85.64	78.53
	MCS9	4	91.04	82.93
	MCS9	8	100.89	91.27
11ah EU_865.5	MCS0	1	84.27	78.28
11ah EU_865.5	MCS9	1	84.62	78.4

Mechanical PADs dimension

Reflow Soldering Profile

Handling and Storage

The AHSM7394S class of modules are a moisture-sensitive device rated at Moisture Sensitive Level 3 (MSL3) per IPC/JEDEC J-STD-20.
After opening the moisture-sealed storage bag, modules that will be subjected to reflow solder or other high-temperature processes mustbe:
1.Mounted to a circuit board within 168 hours at factory conditions.
(≤30°Cand<60%RH)
OR
2.Continuously stored per IPC/JEDEC J-STD-033
Modules that have been exposed to moisture and environmental conditions exceeding packaging and storage conditions MUST be baked before mounting according to IPC/JEDEC J-STD-033. Failure to meet packaging and storage conditions will result in irreparable damage to modules during solder reflow.

Specifications

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